Interface Engineering for Enhancing Air‐Stable Spin‐Charge Interaction in Molecular Spin‐Photovoltaic Devices
- 5 February 2024
- journal article
- research article
- Published by Wiley in Advanced Functional Materials
- Vol. 34 (23)
Abstract
Molecular semiconductors (MSCs) are known as ideal candidates for constructing room‐temperature spin‐charge interactive devices due to their long spin lifetimes and abundant photoelectric properties. These devices can achieve novel and valuable functionalities such as room‐temperature supply units of fully spin‐polarized current. Unfortunately, their performances (sub‐0.1 nA) remain unsatisfactory due to limited charge and spin injection efficiency, which can hardly be improved despite great efforts thus far. Herein, from the theoretical side, an interfacial tunnel layer with precisely‐controlled barrier in spintronic devices may simultaneously enhance spin and charge injection. Accordingly, a solution‐processed small molecule with smooth morphology and amorphous structure is introduced to form a uniform and well‐controllable barrier in molecular spin‐photovoltaic devices. By modulating the thickness to effectively control the barrier, both spin and charge injection efficiency increase by > 150%. Thus, the spin‐charge interactive functionalities as supply units of fully spin‐polarized current have also been significantly improved than the current record at room temperature, the output fully spin‐polarized current (>2 nA) is 1200%‐larger, and the output power increases by > 50 times. Moreover, the interface‐modified spintronic devices exhibit excellent stability even after 70 days of exposure to air, which is essential for practical applications in the future.Keywords
Funding Information
- Natural Science Foundation of Beijing Municipality (4222087, 2222086)
- Natural Science Foundation of Shandong Province (ZR2020ME070)
- National Natural Science Foundation of China (52303225, 52250008, 52050171, 51973043, 22175047, 52103203, 52103338)
This publication has 48 references indexed in Scilit:
- The role of spin in the kinetic control of recombination in organic photovoltaicsNature, 2013
- Spin-Polarized Light-Emitting Diode Based on an Organic Bipolar Spin ValveScience, 2012
- Isotope effect in spin response of π-conjugated polymer films and devicesNature Materials, 2010
- Erratum: Spin routes in organic semiconductorsNature Materials, 2009
- Origin, Development, and Future of Spintronics (Nobel Lecture)Angewandte Chemie International Edition, 2008
- Charge tunneling injection through a thin teflon film between the electrodes and organic semiconductor layer: Relation to morphology of the teflon filmPhysical Review B, 2006
- Concepts for spin injection into semiconductors—a reviewJournal of Physics D: Applied Physics, 2005
- Giant magnetoresistance in organic spin-valvesNature, 2004
- Conditions for efficient spin injection from a ferromagnetic metal into a semiconductorPhysical Review B, 2001
- Enhanced quantum efficiency in polymer electroluminescence devices by inserting a tunneling barrier formed by Langmuir–Blodgett filmsApplied Physics Letters, 1996