Interface Reactions in Ultrathin Functional Dielectric Films
- 8 April 2009
- journal article
- research article
- Published by Wiley in Advanced Engineering Materials
- Vol. 11 (4) , 269-274
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- The initial atomic layer deposition of HfO2∕Si(001) as followed in situ by synchrotron radiation photoelectron spectroscopyJournal of Applied Physics, 2008
- Microscopic and spectroscopic characterization of interfaces and dielectric layers for OFET devicesPhysica Status Solidi (a), 2008
- Size effects in nanoscale ferroelectricsJournal of Alloys and Compounds, 2008
- Thickness dependence of intrinsic dielectric response and apparent interfacial capacitance in ferroelectric thin filmsJournal of Applied Physics, 2007
- Al-oxynitrides as a buffer layer for Pr2O3/SiC interfacesMaterials Science in Semiconductor Processing, 2006
- Electronic Properties of the Interface Formed by Pr2O3 Growth on Si(001), Si(111) and SiC(0001) Surfaces2006
- The interaction of Al, Ag, Au, and Ti to Pr2O3 thin film dielectricsMaterials Science and Engineering: C, 2006
- High-κ gate dielectrics: Current status and materials properties considerationsJournal of Applied Physics, 2001
- Reproducible switching effect in thin oxide films for memory applicationsApplied Physics Letters, 2000
- Ferroelectric properties of vinylidene fluoride copolymersPhase Transitions, 1989