Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
Authors:
- Hiroyuki KinoshitaHKHiroyuki Kinoshita
- 1 December 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (12A) , L1280
Abstract
Zirconium diboride (ZrB2) has a hexagonal crystal structure with an in-plane lattice constant of 3.168 Å, very close to that of GaN (3.189 Å). It is a metalloid compound and a very good electrical conductor, with a resistivity of 4.6 µΩ·cm. We propose ZrB2 (0001) as an electrically conductive lattice-matched substrate for GaN. Firstly, bulk crystal growth of ZrB2 using a radio frequency (rf)-heated floating zone (FZ) method is presented. Relatively large crystals (φ10 mm×60 mm) were obtained using this method. The thermal expansion coefficient and thermal conductivity of ZrB2 were evaluated using this crystal. Characterization of ZrB2 (0001) mirror-polished substrate was carried out by optical microscopic examination and X-ray diffraction. Finally, the results of heteroepitaxial growth are briefly mentioned.Keywords
This publication has 4 references indexed in Scilit:
- Preparation of HfB2 and ZrB2 single crystals by the floating-zone methodJournal of Crystal Growth, 1998
- Preparation of ZrB2 single crystals by the floating zone methodJournal of Crystal Growth, 1996
- Preparation of TiB2 single crystals by the floating zone methodJournal of Crystal Growth, 1994
- A galvanomagnetic investigation of TiB2, NbB2 and ZrB2Journal of Physics and Chemistry of Solids, 1975