An advanced explicit surface potential model physically accounting for the quantization effects in deep-submicron MOSFETs

This publication has 26 references indexed in Scilit:

• A physical compact MOSFET model, including quantum mechanical effects, for statistical circuit design applications
  2002
• A physical compact model for direct tunneling from NMOS inversion layers
  Solid-State Electronics, 2001
• A new charge model including quantum mechanical effects in MOS structure inversion layer
  Solid-State Electronics, 2000
• Closed-form approximation for the perturbationofMOSFET surface potential by quantum-mechanical effects
  Electronics Letters, 2000
• Analysis of the MOS transistor based on the self-consistent solution to the Schrodinger and Poisson equations and on the local mobility model
  IEEE Transactions on Electron Devices, 1998
• Unified complete MOSFET model for analysis of digital and analog circuits
  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1996
• A charge sheet capacitance model of short channel MOSFETs for SPICE
  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1991
• Electronic properties of two-dimensional systems
  Reviews of Modern Physics, 1982
• Quantum properties of surface space-charge layers
  C R C Critical Reviews in Solid State Sciences, 1973
• Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit
  Physical Review B, 1967