Tutorial: Defects in semiconductors—Combining experiment and theory

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Abstract
Point defects affect or even completely determine physical and chemical properties of semiconductors. Characterization of point defects based on experimental techniques alone is often inconclusive. In such cases, the combination of experiment and theory is crucial to gain understanding of the system studied. In this tutorial, we explain how and when such comparison provides new understanding of the defect physics. More specifically, we focus on processes that can be analyzed or understood in terms of configuration coordinate diagrams of defects in their different charge states. These processes include light absorption, luminescence, and nonradiative capture of charge carriers. Recent theoretical developments to describe these processes are reviewed.
Funding Information
  • Marie Sklodowska-Curie Action of the European Union (657074)
  • U.S. Department of Energy (DE-FG02-07ER46386, DE-SC0010689)

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