Fabrication, electrical characterization and device simulation of vertical P3HT field-effect transistors
Authors:
- Bojian XuBXBojian Xu
- Tamer DoganTDTamer Dogan
- Janine G.E. WilbersJWJanine G.E. Wilbers
- Michel P. de JongMJMichel P. de Jong
- Peter A. BobbertPBPeter A. Bobbert
- Wilfred G. van der WielWWWilfred G. van der Wiel
Open Access
- 1 December 2017
- journal article
- Published by Elsevier in Journal of Science: Advanced Materials and Devices
- Vol. 2 (4) , 501-514
Abstract
No abstract availableKeywords
Funding Information
- NWO-nano (STW) (11470)
- China Scholarship Council (201206090154)
- Guangdong Innovative Research Team Program (2013C102)
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