Frequency Dependent Charge-Pumping, How deep does it probe?
Authors:
- 1 January 2006
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1-4
Abstract
Frequency dependent charge pumping measurement has become an important tool for high-k dielectric reliability investigation. The interpretation of how deep the technique probes has become a controversy with important implication on the reliability of the high-k gate dielectric. The paper examines this problem experimentally and theoretically in this paper. Charge pumping experiment has been carried out to beyond 1GHz for the first time, providing evidence that neither of the existing models is correct. The paper proposes a new theoretical model that is consistent with the new dataKeywords
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