Phase change material Ge2Sb1.5Bi0.5Te5 possessed of both positive and negative photoresist characteristics
Authors:
- Hongzhu XiHXHongzhu Xi
- Qian LiuQLQian Liu
- Shengming GuoSGShengming Guo
- 1 August 2012
- journal article
- research article
- Published by Elsevier in Materials Letters
- Vol. 80, 72-74
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Improved thermal and electrical properties of nitrogen-doped Ge-rich Ge3Sb2Te5 for phase-change memory applicationMaterials Letters, 2011
- Laser-induced phase transitions of Ge_2Sb_2Te_5 thin films used in optical and electronic data storage and in thermal lithographyOptics Express, 2010
- Ge2Sb2Te5 and PbZr0.30Ti0.70O3 composite films for application in phase change random access memoryMaterials Letters, 2010
- Laser direct writing of nanoreliefs in Sn nanofilmsOptics Letters, 2009
- Effects of a metal layer on selective etching of a Ge5Sb75Te20phase-change filmSemiconductor Science and Technology, 2008
- Glasses for lithographyJournal of Non-Crystalline Solids, 2008
- Ultrafast-laser-induced parallel phase-change nanolithographyApplied Physics Letters, 2006
- Ultra-high-density phase-change storage and memoryNature Materials, 2006
- Nanosize fabrication using etching of phase-change recording filmsApplied Physics Letters, 2004
- Reversible Electrical Switching Phenomena in Disordered StructuresPhysical Review Letters, 1968