Performance and limitations of AlGaN/GaN HFETs grown on sapphire and SiC substrates
Authors:
- A. VescanAVA. Vescan
- R. DietrichRDR. Dietrich
- A. WiesztAWA. Wieszt
- J.-L. LeeJLJ.-L. Lee
- A. SchurrASA. Schurr
- H. LeierHLH. Leier
- I. DaumillerIDI. Daumiller
- N. KabNKN. Kab
- E. KohnEKE. Kohn
- 11 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 247-256
Abstract
No abstract availableKeywords
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