Resistive switching characteristics of MnO2-based thin film for transparent non-volatile ReRAM
Authors:
- Arvind KumarAKArvind Kumar
- Narendra SinghNSNarendra Singh
- Davinder KaurDKDavinder Kaur
- 11 October 2023
- journal article
- research article
- Published by Elsevier in Journal of Alloys and Compounds
- Vol. 969
Abstract
No abstract availableKeywords
Funding Information
- Department of Science and Technology, Ministry of Science and Technology, India (CRG/2020/005265)
- Anusandhan National Research Foundation
- Defence Research and Development Organisation (ERIP/ER/99011650/M/01/1739)
This publication has 31 references indexed in Scilit:
- Unipolar resistive switching of solution synthesized ZnO nanorod with self-rectifying and Negative Differential Resistance effectsMaterials Letters, 2015
- Resistive switching of Cu/SiC/Au memory devices with a high ON/OFF ratioSolid-State Electronics, 2014
- Forming-free SiN-based resistive switching memory prepared by RF sputteringPhysica Status Solidi (a), 2013
- Unipolar resistive switching phenomena in fully transparent SiN-based memory cellsSemiconductor Science and Technology, 2012
- Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applicationsMicroelectronic Engineering, 2012
- Conduction mechanism of resistive switching films in MgO memory devicesJournal of Applied Physics, 2012
- Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory deviceApplied Physics Letters, 2010
- Multiwall carbon nanotube supported poly(3,4-ethylenedioxythiophene)/manganese oxide nano-composite electrode for super-capacitorsElectrochimica Acta, 2009
- Transparent resistive random access memory and its characteristics for nonvolatile resistive switchingApplied Physics Letters, 2008
- Radio frequency sputter deposition of single phase cuprous oxide using Cu2O as a target material and its resistive switching propertiesThin Solid Films, 2008