A Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile Memories
Authors:
- 12 December 2006
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 19 (1) , 73-76
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Conductivity switching characteristics and reset currents in NiO filmsApplied Physics Letters, 2005
- Reproducible resistance switching in polycrystalline NiO filmsApplied Physics Letters, 2004
- p-type behavior in phosphorus-doped (Zn,Mg)O device structuresApplied Physics Letters, 2004
- Electrical characterisation of NiO/ZnO structuresphysica status solidi (c), 2004
- A p‐Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction DiodesAdvanced Materials, 2003
- Direct Observation of Charge Order in an EpitaxialFilmPhysical Review Letters, 2002
- Oxygen Vacancies as Active Sites for Water Dissociation on RutilePhysical Review Letters, 2001
- Oxide Thin Film Diode Fabricated by Liquid-Phase MethodJapanese Journal of Applied Physics, 1996
- Preparation of transparent, electrically conducting ZnO film from zinc acetate and alkoxideJournal of Materials Science, 1994
- Bistable switching in ZrZrO2Au junctionsJournal of Non-Crystalline Solids, 1970