SnS 2 Thin Film with In Situ and Controllable Sb Doping via Atomic Layer Deposition for Optoelectronic Applications

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Abstract
SnS 2 stands out as a highly promising 2D material with significant potential for applications in the field of electronics and photovoltaic technologies. Numerous attempts have been undertaken to modulate the physical properties of SnS 2 by doping with various metal ions. Here, a series of Sb‐doped SnS 2 is deposited via atomic layer deposition (ALD) super‐cycle process and compared its crystallinity, composition, and optical properties to those of pristine SnS 2 . It is found that the increase in the concentration of Sb is accompanied by a gradual reduction in the Sn and S binding energies. The work function is increased upon Sb doping from 4.32 eV (SnS 2 ) to 4.75 eV (Sb‐doped SnS 2 with 9:1 ratio). When integrated into photodetectors, the Sb‐doped SnS 2 showed improved performance, demonstrating increased peak photoresponsivity values from 19.5 to 27.8 A W −1 at 405 nm, accompanied by an improvement in response speed. These results offer valuable insights into next‐generation optoelectronic applications based on SnS 2 .
Funding Information
  • Deutsche Forschungsgemeinschaft (CRC/SFB 1415)

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