Preparation of copper sulfide thin layers by a single‐source MOCVD process
Authors:
- 1 September 1996
- journal article
- research article
- Published by Wiley in Chemical Vapor Deposition
- Vol. 2 (5) , 174-179
Abstract
Metal dithiocarbamate complexes are also potential candidates for the CVD of metal sulfides (see previous article). This paper reports on an investigation by mass fragmentation initiated by electron impact of the vapor phase decomposition of a copper complex in order to clarify the decomposition route and to assess its suitability as a single‐source precursor for the MOCVD growth of cuprous sulfide. Reproducible growth of crystalline layers was found and the results suggested a two‐step growth mode.Keywords
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