Effect of grain boundary on electrical properties of polycrystalline lanthanum nickel oxide thin films
- 4 December 2012
- journal article
- research article
- Published by Springer Nature in Applied Physics A
- Vol. 112 (4) , 1011-1018
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Microstructure and transport properties of sol–gel derived highly (100)-oriented lanthanum nickel oxide thin films on SiO2/Si substrateJournal of Crystal Growth, 2011
- Metal-Insulator Transition in UltrathinFilmsPhysical Review Letters, 2011
- Nanostructure and performance of Pt–LaNiO3 composite film for ferroelectric film devicesActa Materialia, 2009
- Epitaxial growth and surface metallic nature of LaNiO3 thin filmsApplied Physics Letters, 2008
- Enhanced fatigue property of PZT thin films using LaNiO3 thin layer as bottom electrodeApplied Physics A, 2001
- Characteristics of oriented LaNiO3 thin films fabricated by the sol–gel methodJournal of the European Ceramic Society, 2001
- Thickness-dependent magnetotransport in ultrathin manganite filmsApplied Physics Letters, 1999
- Fabrication and electrical properties of sol-gel derived BaTiO3 films with metallic LaNiO3 electrodeApplied Physics Letters, 1997
- Effect of textured LaNiO3 electrode on the fatigue improvement of Pb(Zr0.53Ti0.47)O3 thin filmsApplied Physics Letters, 1996
- Topotactical reactions with ferrimagnetic oxides having hexagonal crystal structures—IJournal of Inorganic and Nuclear Chemistry, 1959