Room-temperature electron spin relaxation in bulk InAs
Authors:
- 28 August 2000
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (9) , 1333-1335
Abstract
Polarization-resolved, subpicosecond pump–probe measurements at a wavelength of 3.43 μm are used to determine the electron spin relaxation time in bulk InAs at room temperature. The measured of is in excellent agreement with the theoretical value of 21 ps, which is obtained from a nonperturbative calculation based on the D’yakonov–Perel’ mechanism of precessional spin relaxation [M. I. D’yakonov and V. I. Perel’, Sov. Phys. JETP 38, 177 (1974)].
Keywords
This publication has 34 references indexed in Scilit:
- Observation of Spin Injection at a Ferromagnet-Semiconductor InterfacePhysical Review Letters, 1999
- Resonant Spin Amplification in-Type GaAsPhysical Review Letters, 1998
- Strong Hall voltage modulation in hybrid ferromagnet/semiconductor microstructuresApplied Physics Letters, 1997
- Room-Temperature Spin Memory in Two-Dimensional Electron GasesScience, 1997
- Closer to Coherence ControlScience, 1997
- Fabrication of spin-current field-effect transistor structuresJournal of Vacuum Science & Technology A, 1997
- Quantum ComputationScience, 1995
- Spin-Polarized TransportPhysics Today, 1995
- Electronic analog of the electro-optic modulatorApplied Physics Letters, 1990
- Nuclear Dynamic Polarization by Optical Electronic Saturation and Optical Pumping in SemiconductorsPhysical Review Letters, 1968