AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics
Authors:
- 11 November 2013
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 103 (20) , 202108
Abstract
AlGaN/GaN heterostructure field effect transistors with a 150 nm thick GaN channel within stacked AlxGa1−xN layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60 W m−1 K−1, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.Keywords
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