SEU and TID testing of the Samsung 128 Mbit and the Toshiba 256 Mbit flash memory
Authors:
- J.D. KinnisonJKJ.D. Kinnison
- B.G. CarkhuffBCB.G. Carkhuff
- J.R. LanderJLJ.R. Lander
- G.S. BognaskiGBG.S. Bognaski
- K. ChaoKCK. Chao
- G.M. SwiftGSG.M. Swift
- 7 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 96-99
Abstract
The Samsung KM29U128T 128 Mbit and the Toshiba TC58256FT/DC 256 Mbit flash memories were screened for use in the X2000 solid state recorded. Single Event Upset (SEU) and Total Ionizing Dose (TID) results are presented in this paper.Keywords
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