Record Open‐Circuit Voltage in Perovskite/PERC Tandem Solar Cells via Novel a ‐Si Interlayer Passivation

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Abstract
Monolithic perovskite/silicon tandem (PST) solar cells are rapidly emerging as next‐generation solar cells with significant potential for commercialization. This study presents a proof of concept for a silicon diffused junction‐based PST cell, utilizing a passivated emitter rear contact (PERC) cell with a low‐temperature ( V oc ) improve from 0.58 V to 0.61 V due to the passivation effect, which reduces silicon surface recombination. Perovskite is passivated using ammonium salts with varying alkyl chain lengths, including n‐Butylammonium bromide, n‐Hexylammonium bromide, and n‐Octylammonium bromide (OABr). OABr is the most effective, increasing the V oc of the perovskite top cell from 1.18 V to 1.22 V by reducing non‐radiative recombination. The best‐performing PST cell achieves a power conversion efficiency (PCE) of 25.71%, with a current density of 17.62 mA cm − 2 , V oc of 1.810 V, and fill factor of 80.62%. This represents the highest V oc and PCE reported for PST cells with PERC‐based p‐type silicon bottom cell technology. Even after 1000 hours of damp heat testing at 85 °C and 85% relative humidity, the device with dual passivation maintained 90.70% of its initial PCE.
Funding Information
  • Korea Institute of Energy Technology Evaluation and Planning (20213091010010)
  • Korea Institute of Energy Technology Evaluation and Planning (20228520010020)

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