Fabrication and annihilation of nanovoids in Cu nanoclusters by ion implantation into silica and subsequent annealing

Authors:

1 May 2006

journal article
conference paper
Published by AIP Publishing in Applied Physics Letters

Vol. 88 (18) , 183114
DOI:10.1063/1.2201866

Abstract

Cu ions were implanted at

180 keV

into silica with doses ranging from

5 \times 10^{16} to 2 \times 10^{17} ions ∕ {cm}^{2}

. Cross-sectional transmission electron microscopy and high-resolution transmission electron microscopy images showed that Cu nanoclusters containing nanovoids have been formed for doses higher than

1 \times 10^{17} ions ∕ {cm}^{2}

. The nanovoids grew when the samples were annealed in a reducing atmosphere at

900 ° C

for

1 h

and then disappeared at

900 ° C

for

4 h

. The mechanisms for the formation and disappearance of nanovoids are discussed.

Keywords

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