Growth mechanism of nanocrystalline silicon at the phase transition and its application in thin film solar cells
Authors:
- R.E.I. SchroppRSR.E.I. Schropp
- J.K. RathJRJ.K. Rath
- H. LiHLH. Li
- 1 January 2009
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 311 (3) , 760-764
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Hot-wire chemical vapor-deposited microcrystalline silicon in single and tandem n–i–p solar cellsJournal of Non-Crystalline Solids, 2006
- Superior structural and electronic properties for amorphous silicon–germanium alloys deposited by a low temperature hot wire chemical vapor deposition processJournal of Non-Crystalline Solids, 2006
- Key issues for fabrication of high quality amorphous and microcrystalline silicon solar cellsThin Solid Films, 2005
- Deposition of microcrystalline silicon prepared by hot-wire chemical-vapor deposition: The influence of the deposition parameters on the material properties and solar cell performanceJournal of Applied Physics, 2005
- Tandem solar cells deposited using hot-wire chemical vapor depositionJournal of Non-Crystalline Solids, 2004
- Protocrystalline Silicon at High Rate from Undiluted SilaneMRS Proceedings, 2004
- Climate Sensitivity Uncertainty and the Need for Energy Without CO 2 EmissionScience, 2003
- Status of Cat-CVD (Hot-Wire CVD) research in EuropeThin Solid Films, 2001
- Profiled Poly-Silicon Films by Hot-Wire Chemical Vapour Deposition for Solar Cells on Cheap Metal SubstrateSolid State Phenomena, 1999
- Deposition of device quality, low H content amorphous siliconJournal of Applied Physics, 1991