The effect of vacuum annealing on the structure and properties of the electrically conductive a-CN coating
Authors:
- A. PoplavskyAPA. Poplavsky
- Yu KudriavtsevYKYu Kudriavtsev
- A. KolpakovAKA. Kolpakov
- Е. PilyukЕPЕ. Pilyuk
- S. ManokhinSMS. Manokhin
- I. GoncharovIGI. Goncharov
Abstract
No abstract availableKeywords
This publication has 40 references indexed in Scilit:
- Quantum electronic mechanisms of atomic rearrangements during growth of hard carbon filmsSurface and Coatings Technology, 2011
- Nanometer-sized carbon coatings on a silicon wafer: The effect that nitrogen doping level has on specific conductivity and morphologyNanotechnologies in Russia, 2011
- The origin of preferred orientation during carbon film growthJournal of Physics: Condensed Matter, 2009
- Electronic and atomic structure of diamond-like carbonSemiconductor Science and Technology, 2003
- Variable-range hopping conductivity in La1 xCaxMn1 yFeyO3: evidence of a complex gap in density of states near the Fermi levelJournal of Physics: Condensed Matter, 2002
- Optical properties of amorphous carbon films deposited by magnetron sputtering of graphiteSemiconductors, 2001
- Influence of nitrogen and temperature on the deposition of tetrahedrally bonded amorphous carbonJournal of Applied Physics, 2000
- Interpretation of Raman spectra of disordered and amorphous carbonPhysical Review B, 2000
- Stress reduction and bond stability during thermal annealing of tetrahedral amorphous carbonJournal of Applied Physics, 1999
- Absorption and the optical gap of a-C:H films produced from acetylene plasmasSemiconductors, 1999