Thermodynamic Equilibrium‐Nonequilibrium Competition in Nanofilaments for Achieving Complementary Electronic Synapses
- 30 October 2022
- journal article
- research article
- Published by Wiley in Advanced Functional Materials
- Vol. 32 (51)
Abstract
In the human brain, the natural complementary behaviors of synapse connections, which are enhanced and weakened through the participation of astrocytes and microglias, play an important role in the process of training and memory. Even though memristors based on the electrochemical metallization mechanism (ECM) have great potential in realizing electronic synapses (e‐synapses), the lack of complementary ECM e‐synapses has, to a certain extent, hindered the construction of artificial neural networks. In this study, the thermodynamic equilibrium‐nonequilibrium competition (TC) in nanofilaments is meticulously designed by modifying the metal‐ion nanochannels to achieve complementary ECM e‐synapses. The evolution in the morphology of a TC‐induced nanofilament includes a thinning behavior of the nanofilaments caused by electrical stimulation and a coarsening behavior caused by metal‐ion chelation. The TC effect leads to a decrease in the conductance under positive pulse stimulation and to an increase in the conductance while resting, these behaviors being exactly complementary to those of a conventional ECM e‐synapse. Finally, the feasibility of fabricating logic gate circuits with learning capability based on complementary ECM e‐synapses is verified using behavioral‐level modeling. These ECM e‐synapses with complementary functions are expected to be significant to researchers in the field of large neural network systems.Keywords
Funding Information
- National Natural Science Foundation of China (62 004 039)
- National Research Foundation of Korea (2022R1I1A4053429)
This publication has 46 references indexed in Scilit:
- H+-type and OH−-type biological protonic semiconductors and complementary devicesScientific Reports, 2013
- Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO MemristorAdvanced Functional Materials, 2012
- Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structuresApplied Physics Letters, 2012
- A consistent and accurateab initioparametrization of density functional dispersion correction (DFT-D) for the 94 elements H-PuThe Journal of Chemical Physics, 2010
- A nanomechanical switch for integration with CMOS logicJournal of Micromechanics and Microengineering, 2009
- Resistive switching in transition metal oxidesMaterials Today, 2008
- Pseudo-second order model for sorption processesProcess Biochemistry, 1999
- Comparative study of BSSE correction methods at DFT and MP2 levels of theoryJournal of Computational Chemistry, 1998
- CMOS active pixel image sensors for highly integrated imaging systemsIEEE Journal of Solid-State Circuits, 1997
- VMD: Visual molecular dynamicsJournal of Molecular Graphics, 1996