Device structures and fabrication techniques for amorphous semiconductor switching devices
Author:
- R.G. NealeRNR.G. Neale
- 1 January 1970
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 2, 558-574
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Ovonic threshold switching characteristicsJournal of Non-Crystalline Solids, 1970
- Reversible conductivity transformations in chalcogenide alloy filmsJournal of Non-Crystalline Solids, 1970
- Radiation Hardness of Ovonic DevicesIEEE Transactions on Nuclear Science, 1968