Floating zone growth and characterization of semiconducting Ru2Si3 single crystals
Authors:
- 1 October 2002
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 244 (3-4) , 296-304
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- SrZrO3 single crystal growth by floating zone technique with radiation heatingJournal of Crystal Growth, 2002
- Thermoelectric properties of Rh-doped Ru2Si3 prepared by floating zone melting methodJournal of Nuclear Materials, 2001
- Experimental set-up for thermopower and resistivity measurements at 100-1300 KMeasurement Science and Technology, 2001
- Thermoelectric properties of β-FeSi2 single crystals and polycrystalline β-FeSi2+x thin filmsThin Solid Films, 2001
- Transport Properties2000
- Growth and structural characterization of semiconducting Ru2Si3Journal of Luminescence, 1998
- Low Temperature Transport Properties of Ru2Si3 Single CrystalsMRS Proceedings, 1995
- Resistivity of Ru2Si3 single crystalsApplied Surface Science, 1993
- Diffusionless phase transformations of Ru2Si3, Ru2Ge3 and Ru2Sn3Journal of the Less Common Metals, 1975
- Phases with Nowotny chimney-ladder structures considered as `electron' phasesActa Crystallographica Section B: Structural Science, Crystal Engineering and Materials, 1970