Prediction of multiband luminescence due to the gallium vacancy–oxygen defect complex in GaN
Open Access
- 25 June 2018
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 112 (26) , 262104
Abstract
Oxygen is the most common unintentional impurity found in GaN. We study the interaction between substitutional oxygen (ON) and the gallium vacancy (VGa) to form a point defect complex in GaN. The formation energy of the gallium vacancy is largely reduced in n-type GaN by complexing with oxygen, while thermodynamic and optical transition levels remain within the bandgap. We study the spectroscopy of this complex using a hybrid quantum-mechanical molecular-mechanical embedded-cluster approach. We reveal how a single defect center can be responsible for multiband luminescence, including possible contributions to the ubiquitous yellow luminescence signatures observed in n-type GaN, owing to the coexistence of diffuse (extended) and compact (localized) holes.Keywords
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Funding Information
- Engineering and Physical Sciences Research Council (EP/I03014X, EP/K016288, EP/K038419)
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