Single-quantum well InGaN green light emitting diode degradation under high electrical stress
Authors:
- Daniel L. BartonDBDaniel L. Barton
- Marek OsinskiMOMarek Osinski
- Piotr PerlinPiotr Perlin
- Petr G. EliseevPEPetr G. Eliseev
- Jinhyun LeeJLJinhyun Lee
- 1 August 1999
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 39 (8) , 1219-1227
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- AlGaN/InGaN/GaN blue light emitting diode degradation under pulsed current stressApplied Physics Letters, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting DiodesJapanese Journal of Applied Physics, 1995
- High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well StructuresJapanese Journal of Applied Physics, 1995