A large signal non-quasi-static MOS model for RF circuit simulation
Authors:
- A.J. ScholtenASA.J. Scholten
- L.F. TiemeijerLTL.F. Tiemeijer
- P.W.H. De VreedePVP.W.H. De Vreede
- D.B.M. KlaassenDKD.B.M. Klaassen
- 22 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 163-166
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- RF MOSFET modeling accounting for distributed substrate and channel resistances with emphasis on the BSIM3v3 SPICE model2002
- A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulationIEEE Transactions on Electron Devices, 1998
- An analytical model for the Non-Quasi-Static small-signal behaviour of submicron MOSFETsSolid-State Electronics, 1995