Self-Aligned Short-Channel Vertical Power DMOSFETs in 4H-SiC
Authors:
- 15 June 2004
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 457-460, 1393-1396
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbideApplied Physics Letters, 2000
- High-voltage double-implanted power MOSFET's in 6H-SiCIEEE Electron Device Letters, 1997