High performance GeO2/Ge nMOSFETs with source/drain junctions formed by gas phase doping
Authors:
- 1 December 2009
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 1-4
Abstract
We have revealed that the MOVPE-based gas phase doping (GPD) can yield lower arsenic diffusion constant and lower leakage current n+/p junctions in Ge compared to conventional ion implantation doping. Thus, the GPD is quite effective for realizing high performance Ge n-channel MOSFETs. By using the GPD for source/drain (S/D) junction formation, the GeO 2 /Ge nMOSFETs have achieved high electron mobility of 804 cm 2 /Vs with maintaining low junction leakage current of 10 -3 A/cm 2 and high I on /I off ratio of 10 4 .Keywords
This publication has 4 references indexed in Scilit:
- Ge (100) and (111) N- and P-FETs With High Mobility and Low-$T$ Mobility CharacterizationIEEE Transactions on Electron Devices, 2009
- Nanoscale germanium MOS Dielectrics-part I: germanium oxynitridesIEEE Transactions on Electron Devices, 2006
- New interface state density extraction method applicable to peaked and high-density distributions for Ge MOSFET developmentIEEE Electron Device Letters, 2006
- Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten GateIEEE Electron Device Letters, 2004