Carbon Nanotube Feedback-Gate Field-Effect Transistor: Suppressing Current Leakage and Increasing On/Off Ratio
Authors:
- 29 December 2014
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 9 (1) , 969-977
Abstract
Field-effect transistors (FETs) based on moderate or large diameter carbon nanotubes (CNTs) usually suffer from ambipolar behavior, large off-state current and small current on/off ratio, which are highly undesirable for digital electronics. To overcome these problems, a feedback-gate (FBG) FET structure is designed and tested. This FBG FET differs from normal top-gate FET by an extra feedback-gate, which is connected directly to the drain electrode of the FET. It is demonstrated that a FBG FET based on a semiconducting CNT with a diameter of 1.5 nm may exhibit low off-state current of about 1 × 10–13 A, high current on/off ratio of larger than 1 × 108, negligible drain-induced off-state leakage current, and good subthreshold swing of 75 mV/DEC even at large source-drain bias and room temperature. The FBG structure is promising for CNT FETs to meet the standard for low-static-power logic electronics applications, and could also be utilized for building FETs using other small band gap semiconductors to suppress leakage current.Keywords
Funding Information
- Ministry of Science and Technology of the People's Republic of China (2011CB933001, 2011CB933002)
- National Natural Science Foundation of China (61271051, 61321001, 61322105, 61376126, 61390504)
- Beijing Municipal Science and Technology Commission, Adminitrative Commission of Zhongguancun Science Park (20121000102, D14110000061400, Z131100003213021)
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