High Layer Uniformity of Two-Dimensional Materials Demonstrated Surprisingly from Broad Features in Surface Electron Diffraction
- 9 September 2020
- journal article
- research article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry Letters
- Vol. 11 (21) , 8937-8943
Abstract
Paradoxically a very broad diffraction background, named the Bell-Shaped-Component (BSC), has been established as a feature of graphene growth. Although the BSC has been present in the earlier literature it has been ignored. Recent diffraction studies as a function of electron energy have shown that the BSC is not related to scattering interference. The BSC is a very strong effect, but its origin is still unclear. Here, additional experiments are carried out as a function of temperature while monitoring changes in the intensity of different spots over the range that single-layer-graphene (SLG) grows. Quantitative fitting of the profiles shows that the BSC follows the increase of the G(10) spot, proving directly that BSC is an indicator of high quality graphene. Additional metal deposition experiments provide more information about the BSC. The BSC is insensitive to metal deposition and it increases with metal intercalation, because a more uniform interface forms between graphene and SiC. These experiments support the conclusion that the BSC originates from electron spatial confinement within SLG and surprisingly it is an excellent measure of graphene uniformity, instead of film disorder.Keywords
Funding Information
- Basic Energy Sciences
- Deutsche Forschungsgemeinschaft (278162697? SFB1242)
- U.S. Department of Energy (DE-AC02-07CH11358)
This publication has 26 references indexed in Scilit:
- Metals on Graphene: Interactions, Growth Morphology, and Thermal StabilityCrystals, 2013
- Metal Nanostructure Formation on Graphene: Weak versus Strong BondingAdvanced Materials, 2011
- Corrugation in Exfoliated Graphene: An Electron Microscopy and Diffraction StudyACS Nano, 2010
- Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbideNature Materials, 2009
- The electronic properties of grapheneReviews of Modern Physics, 2009
- The growth and morphology of epitaxial multilayer grapheneJournal of Physics: Condensed Matter, 2008
- Structural properties of the graphene-SiC(0001) interface as a key for the preparation of homogeneous large-terrace graphene surfacesPhysical Review B, 2007
- Interlayer Interaction and Electronic Screening in Multilayer Graphene Investigated with Angle-Resolved Photoemission SpectroscopyPhysical Review Letters, 2007
- Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based NanoelectronicsThe Journal of Physical Chemistry B, 2004
- Electric Field Effect in Atomically Thin Carbon FilmsScience, 2004