ArF-Excimer-Laser Annealing of 3C-SiC Films
Authors:
- Toru MizunamiTMToru Mizunami
- Naotake ToyamaNTNaotake Toyama
- 1 January 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (1R)
Abstract
Boron-doped 3C-SiC films grown by thermal chemical vapor deposition (CVD) at 950°C using an infrared lamp were annealed using an ArF excimer laser (193 nm). The crystal quality was studied using reflection high-energy electron diffraction (RHEED), and the surface morphology was studied using a scanning electron microscope (SEM). It was demonstrated that both the crystal quality and the surface morphology were improved after irradiation of three laser pulses with an energy density of 1.4–1.6 J/cm2 per pulse.Keywords
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