Temperature dependent electron effective mass and barrier height in HfO2 based metal/oxide/metal devices
Author:
- 16 June 2015
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 48 (28)
Abstract
Electrical measurements are realized on Cu/HfO 2 /Pt capacitors to extract the electron effective mass in HfO 2 and the barrier height at the Cu/HfO 2 interface. The dominant conduction mechanisms are found to be the Schottky emission at medium voltages and the Fowler–Nordheim tunneling at high voltages. Previous research has usually been carried out by assuming a constant value for either the electron effective mass in oxide or the interfacial potential barrier height to determine the other parameter. However, in contrast to that general practice, an iterative method was proposed in the present study to determine, at the same time, the electron effective mass in HfO 2 and the barrier height at the Cu/HfO 2 interface without making any prior assumption about their values. The temperature dependence of these two parameters was also studied in the 298–423 K range. It is found that they strongly vary with temperature. The effective mass decreases quadratically with temperature, while the barrier height increases linearly with temperature.Keywords
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