Phonon density of states of bulk gallium nitride
Authors:
- 6 July 1998
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (1) , 34-36
Abstract
We report the measured phonon density of states of a bulk GaN powder by time-of-flight neutron spectroscopy. The observed one-phonon excitation spectrum consists of two broad bands centered at about 23 and 39 meV corresponding to the acoustic and the first group of optical phonons; two sharp bands of upper optic modes at about 75 and 86 meV; and a gap of 45–65 meV. The phonon dispersion curves, lattice specific heat, and Debye temperature are calculated from fitting the data with a rigid-ion model.Keywords
This publication has 37 references indexed in Scilit:
- Phonon excitations and related thermal properties of aluminum nitridePhysical Review B, 1998
- Application of Green’s-function technique to the calculation of multiphoton absorption coefficients of crystalline solidsPhysical Review B, 1998
- Zone-center optical phonons in wurtzite GaN and AlNJournal of Applied Physics, 1997
- Brillouin scattering study of gallium nitride: elastic stiffness constantsJournal of Physics: Condensed Matter, 1997
- Mechanical Properties of Gallium Nitride and Related MaterialsMRS Proceedings, 1997
- Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layersApplied Physics Letters, 1996
- Elastic constants of gallium nitrideJournal of Applied Physics, 1996
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1992
- Bond-orbital model. IIPhysical Review B, 1974
- Infrared Lattice Vibrations and Free-Electron Dispersion in GaNPhysical Review B, 1973