Tailoring the Band Alignment of Gax Zn1-x O/InGaZnO Heterojunction for Modulation-Doped Transistor Applications
- 20 June 2018
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 215 (18) , 1800332
Abstract
No abstract availableKeywords
Funding Information
- National Natural Science Foundation of China (61504022)
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