Recent advancement in ScAlN/GaN high electron mobility transistors: Materials, properties, and device performance
Authors:
- P. MurugapandiyanPMP. Murugapandiyan
- S. MaheswariSMS. Maheswari
- A.S. Augustine FletcherAFA.S. Augustine Fletcher
- G. SaranyaGSG. Saranya
- P. AnandanPAP. Anandan
- 26 March 2025
- journal article
- Published by Elsevier in Materials Science in Semiconductor Processing
- Vol. 193
Abstract
No abstract availableThis publication has 35 references indexed in Scilit:
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