Polarization-resolved Raman spectroscopy reveals the atomic local ordering in silicon germanium tin epitaxial alloys
Authors:
- Agnieszka Anna Corley-WiciakACAgnieszka Anna Corley-Wiciak
- Omar ConcepciónOCOmar Concepción
- Marvin Hartwig ZoellnerMZMarvin Hartwig Zoellner
- Gianfranco SfunciaGSGianfranco Sfuncia
- Florian BärwolfFBFlorian Bärwolf
- Giuseppe NicotraGNGiuseppe Nicotra
- Dan BucaDBDan Buca
- Giovanni CapelliniGCGiovanni Capellini
- Davide SpiritoDSDavide Spirito
- 4 October 2024
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 8 (10)
Abstract
No abstract availableThis publication has 35 references indexed in Scilit:
- Si–Ge–Sn alloys grown by chemical vapour deposition: a versatile material for photonics, electronics, and thermoelectricsApplied Physics A, 2023
- Raman shifts in MBE‐grown SixGe1 − x − ySny alloys with large Si contentJournal of Raman Spectroscopy, 2021
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn EpilayersCrystal Growth & Design, 2021
- Short-Range Order in GeSn AlloyACS Applied Materials & Interfaces, 2020
- Advanced GeSn/SiGeSn Group IV Heterostructure LasersAdvanced Science, 2018
- Sn – Induced decomposition of SiGeSn alloys grown on Si by molecular-beam epitaxyJournal of Crystal Growth, 2017
- Fundamentals of Ge 1−x Sn x and Si y Ge 1−x-y Sn x RPCVD epitaxyMaterials Science in Semiconductor Processing, 2017
- EXAFS study of local structure contributing to Sn stability in SiyGe1-y-zSnzMaterials Science in Semiconductor Processing, 2017
- SiGeSn Ternaries for Efficient Group IV Heterostructure Light EmittersSmall, 2017
- Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductorsThin Solid Films, 2010