A Novel Boost Marx Pulse Generator Based on Single-Driver Series-Connected SiC MOSFETs

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Abstract
This article presents a new type of all solid state boost Marx pulse generator. On the basis of the classic pulse forming Marx circuit, without changing the voltage level of each voltage module, a new switch is added for the isolated inductor energy storage and recovery, so as to realize the output of high-voltage nanosecond pulses. At the same time, in order to improve the voltage level of the semiconductor switch and break the limitation of the voltage of the single-stage pulse forming circuit, a series-connected silicon carbide (SiC) metal-oxide-semiconductor field effect transistor ( mosfet s) with a single external driver is designed. The series switch has a simple structure with few components and is extremely easy to use in a modular high voltage pulse generator. Its theoretical feasibility is verified by mathematical model and circuit simulation, and the ten-stage prototype is built in this article. Under the condition of input dc voltage of 500 V, it can output 18 kV high voltage pulses of 200–1200 ns, and the gain multiple has reached 36 times.
Funding Information
  • National Natural Science Foundation of China (52277135, 52237010, 51907011)

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