Anodic nitridation of silicon and silicon dioxide

Authors:
  • WOW.G. Oldham
    W.G. Oldham
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Abstract
Anodic nitridation of Si wafers and SiO2films in an ammonia plasma was investigated. Compositions of the anodic nitride and the anodic nitrided-oxide films were analyzed with Auger electron spectroscopy and Rutherford backscattering techniques. The etching and oxidation behavior as well as the interfacial, electrical conduction, and charge trapping properties were studied.