Reduction of contact resistance in V‐based electrode for high AlN molar fraction n‐type AlGaN by using thin SiNx intermediate layer

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Abstract
We found out the reduction of contact resistance in V‐based electrode for high AlN molar fraction n‐type AlGaN by using thin SiNx intermediate layer. The contact resistivity for n‐type Al0.70Ga0.30N with the V/Al/Ni/Au electrode using SiNx intermediated layer reached 1.13 × 10−6 Ω cm2. Moreover, contact resistivity using SiNx intermediated layer had been reduced more than one order of magnitude in all AlN molar fractions from 0.62 to 0.87. Using this electrode, we also demonstrated UV light‐emitting diodes (LEDs) on n‐type Al0.70Ga0.30N underlying layer with an emission wavelength of approximately 283 nm. An operating LED voltage using a V/Al/Ni/Au electrode with SiNx intermediated layer was 3.3 V lower at 100 mA current injection than that without SiNx intermediated layer.
Funding Information
  • Ministry of Education, Culture, Sports, Science and Technology
  • Japan Society for the Promotion of Science (15H02019)
  • Japan Society for the Promotion of Science (16H06416)
  • Japan Science and Technology Corporation (16815710)

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