Semi-insulating 4H-SiC lateral bulk acoustic wave resonators
- 15 March 2021
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 118 (11) , 114002
Abstract
Silicon carbide (SiC) excels in its outstanding mechanical properties, which are widely studied in microelectromechanical systems. Recently, the mechanical tuning of color centers in 4H-SiC has been demonstrated, broadening its application in quantum spintronics. The strain generated in a mechanical resonator can be used to manipulate the quantum state of the color center qubit. This work reports a lateral overtone mechanical resonator fabricated from a semi-insulating bulk 4H-SiC wafer. An aluminum nitride piezoelectric transducer on SiC is used to drive the resonance. The resonator shows a series of modes with quality factors (Q) above 3000. An acoustic reflector positioned at the anchor shows a 22% improvement in Q at 300 MHz resonance and suppresses the overtone modes away from it. This monolithic SiC resonator allows optical access to the SiC color centers from both sides of the wafer, enabling a convenient setup in quantum measurements.Keywords
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Funding Information
- National Science Foundation (1839164)
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