p-type doping of MoS2 thin films using Nb
Authors:
- Edwin W. LeeELEdwin W. Lee
- Zihao YangZYZihao Yang
- Rohan MishraRMRohan Mishra
- Manuel A. RoldanMRManuel A. Roldan
- 3 March 2014
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 104 (9) , 092104
Abstract
We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited MoS2. Niobium was found to act as an efficient acceptor up to relatively high density in MoS2 films. For a hole density of 3.1 × 1020 cm−3, Hall mobility of 8.5 cm2 V−1 s−1 was determined, which matches well with the theoretically expected values. X-ray diffraction scans and Raman characterization indicated that the film had good out-of-plane crystalline quality. Absorption measurements showed that the doped sample had similar characteristics to high-quality undoped samples, with a clear absorption edge at 1.8 eV. Scanning transmission electron microscope imaging showed ordered crystalline nature of the Nb-doped MoS2 layers stacked in the [0001] direction. This demonstration of substitutional p-doping in large area epitaxial MoS2 could help in realizing a wide variety of electrical and opto-electronic devices based on layered metal dichalcogenides.Keywords
Funding Information
- NSF (ECCS-0925529)
This publication has 24 references indexed in Scilit:
- Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene HeterostructuresACS Nano, 2013
- High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power SystemsACS Nano, 2013
- Electroluminescence in Single Layer MoS2Nano Letters, 2013
- Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronicsNature Nanotechnology, 2012
- High‐Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to InfraredAdvanced Materials, 2012
- Integrated Circuits Based on Bilayer MoS2 TransistorsNano Letters, 2012
- High-mobility and low-power thin-film transistors based on multilayer MoS2 crystalsNature Communications, 2012
- Integrated Circuits and Logic Operations Based on Single-Layer MoS2ACS Nano, 2011
- How Good Can Monolayer MoS2 Transistors Be?Nano Letters, 2011
- Single-layer MoS2 transistorsNature Nanotechnology, 2011