A correlation between electron traps and growth processes in n-GaAs prepared by molecular beam epitaxy
Authors:
- 15 February 1980
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (4) , 311-312
Abstract
By using a single Knudsen source independently to generate molecular beams of As2 and As4 from elemental arsenic, a direct correlation has been observed between the arsenic species used and deep level concentrations in molecular beam epitaxy grown n-type GaAs films. Some preliminary observations on comparative growth temperature effects and Ge site occupancy are also reported.Keywords
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