Silicon carbide—a high-transparency nonlinear material for THz applications

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Abstract
Optical properties of 4H-SiC were measured using time-domain and Fourier transform spectroscopy in the range of 0.1–20 THz. A high-transparency region was found between o-wave and e-wave were approximated in the form of Sellmeier equations for the entire transparency range. Phase matched frequency conversion was found to be possible at wavelengths from the visible through the mid-IR and further into the far-IR (THz) region beyond 17 μm. Extremely low absorption coefficient, high damage threshold, and the possibility of phase matching make this material highly suited for high power THz optics and generation.
Funding Information
  • Engineering and Physical Sciences Research Council (EPSRC)
  • National Measurement Office of the U.K.
  • Russian Science Foundation (RSF) (15-19-10021)
  • Tomsk State University (8.1.51.2015)

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