Structural defects in α-SiC single crystals grown by the modified-Lely method
Authors:
- Jun TakahashiJTJun Takahashi
- 1 October 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 167 (3-4) , 596-606
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- White-beam synchrotron topographic studies of defects in 6H-SiC single crystalsJournal of Physics D: Applied Physics, 1995
- Crystalline imperfections in 4H SiC grown with a seeded Lely methodJournal of Crystal Growth, 1994
- Sublimation growth of SiC single crystalline ingots on faces perpendicular to the (0001) basal planeJournal of Crystal Growth, 1994
- Structural macro-defects in 6H-SiC wafersJournal of Crystal Growth, 1993
- Growth of large SiC single crystalsJournal of Crystal Growth, 1993
- An optical and X-ray topographic study of giant screw dislocations in silicon carbideJournal of Crystal Growth, 1985
- Single crystal growth of SiC substrate material for blue light emitting diodesIEEE Transactions on Electron Devices, 1983
- X-ray topographic studies of SiC crystals grown from vapour phaseJournal of Crystal Growth, 1983
- General principles of growing large-size single crystals of various silicon carbide polytypesJournal of Crystal Growth, 1981
- The direct observation of a cluster of screw dislocations in silicon carbideJournal of Crystal Growth, 1968