Comparison of the theoretical and experimental differential gain in strained layer InGaAs/GaAs quantum well lasers
Authors:
- 2 September 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (10) , 1162-1164
Abstract
A theoretical model that uses simple, analytic valence band equations to calculate the differential gain in strained layer InGaAs/GaAs quantum wells shows good agreement with experimental differential gain values obtained from multiple quantum well strained layer lasers. The differential gain in these devices is 7 times greater than in bulk, p-type doped InGaAsP lasers. Calculations including nonlinear damping effects indicate that modulation bandwidths exceeding 60 GHz should be achievable in strained layer quantum well lasers.Keywords
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