Dynamic behavior of clusters in the early stage of SiC (0001) epitaxial growth: A Kinetic Monte Carlo study
Authors:
- Xuejiang ChenXCXuejiang Chen
- Wensen AiWAWensen Ai
- Hao ZhaoHZHao Zhao
- Yuan LiYLYuan Li
- Jianmei FengJFJianmei Feng
Abstract
No abstract availableKeywords
This publication has 35 references indexed in Scilit:
- Step bunching of vicinalsurfacesPhysical Review B, 2009
- Scaling of Island Densities in Submonolayer Growth of Binary AlloysPhysical Review Letters, 2007
- CVD Growth of 3C‐SiC on 4H/6H MesasChemical Vapor Deposition, 2006
- Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic DevicesJapanese Journal of Applied Physics, 2004
- Modeling surface kinetics and morphology during 3C, 2H, 4H, and 6H–SiC (111) step-flow growthJournal of Vacuum Science & Technology A, 1998
- Step bunching in chemical vapor deposition of 6H– and 4H–SiC on vicinal SiC(0001) facesApplied Physics Letters, 1995
- Low-temperature growth of SiC thin films on Si and 6H–SiC by solid-source molecular beam epitaxyApplied Physics Letters, 1995
- Dynamics of irreversible island growth during submonolayer epitaxyPhysical Review B, 1994
- Gas-source molecular beam epitaxy of monocrystalline β–SiC on vicinal α(6H)–SiCJournal of Materials Research, 1993
- Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substratesJournal of Applied Physics, 1988