Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy
Authors:
- 12 August 2013
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 103 (7) , 073109
Abstract
In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts with a high In concentration, while comparatively larger catalysts containing less In induce defected InAs nanowires. This study indicates that the structural quality of InAs nanowires can be controlled by the size of Au catalysts when other growth conditions remain as constants.Keywords
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