Theory of Resonant, Far-Infrared Generation in InSb
Authors:
- 7 August 1972
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 29 (6) , 362-364
Abstract
The spin-flip Raman interaction causes a nonlinear spin-resonance process in semi-conductor crystals. This mechanism is responsible for a large, resonant coefficient for difference-frequency generation in InSb.Keywords
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