Enhanced long-wavelength transient photoresponsiveness of WO3 induced by tellurium doping
Authors:
- 29 July 2008
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Chemical Communications
- No. 37,p. 4454-4456
Abstract
Tungsten trioxide (WO3) films doped with 0.25 atom% tellurium synthesised by a sol–gel route, show strong transient photocurrents under chopped sub-bandgap illumination (hν = 1.8 eV < Eg) at low bias potentials from 0.2 to 0.7 V; such effects are ascribed to the presence of a localized narrow band (NB) between the VB and the CB in this material.Keywords
This publication has 14 references indexed in Scilit:
- Strong photoresponse of nanostructured tungsten trioxide films prepared via a sol–gel routeJournal of Materials Chemistry, 2007
- Novel low density mesoporous WO3 films prepared by electrodepositionCurrent Applied Physics, 2006
- Effect of Oxide-Electrode Interface on Dilute NO2 Sensing Properties of WO3 Thin Film NanosensorsElectrochemistry, 2006
- Effect of oxalic acid dihydrate on optical and electrochemical properties of sol–gel derived amorphous electrochromic WO3 filmsElectrochimica Acta, 2005
- The comparative effect of two different annealing temperatures and times on the sensitivity and long-term stability of WO/sub 3/ thin films for detecting NO/sub 2/IEEE Sensors Journal, 2003
- Characterization of electrodeposited WO3 films and its application to electrochemical wastewater treatmentElectrochimica Acta, 2002
- Crystallographically Oriented Mesoporous WO3 Films: Synthesis, Characterization, and ApplicationsJournal of the American Chemical Society, 2001
- Synthesis and electrochromic properties of mesoporous tungsten oxideJournal of Materials Chemistry, 2000
- Visible-light-induced oxygen generation from aqueous dispersions of tungsten(VI) oxideThe Journal of Physical Chemistry, 1984
- Electrochemical Photolysis of Water at a Semiconductor ElectrodeNature, 1972